Download Materials and Processes for Surface and Interface by Harold M. Anderson (auth.), Yves Pauleau (eds.) PDF

By Harold M. Anderson (auth.), Yves Pauleau (eds.)

Materials and strategies for floor and Interface Engineering, which has been written via specialists within the fields of deposition know-how and floor amendment suggestions, deals modern educational papers at the most up-to-date advances in floor and interface engineering. The emphasis is on basic facets, ideas and purposes of plasma and ion beam processing know-how.
A guide for the engineer and scientist in addition to an advent for college kids in different branches of fabrics technological know-how and floor engineering.

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Extra info for Materials and Processes for Surface and Interface Engineering

Example text

In oxide etching, there is a need to etch Si02 at a high rate, while being able to stop the process almost instantaneously on the encountering the underlying Si substrate. This calls for a highly selective etch [6]. It is generally thought that the oxide etch process is more of a physical, ion bombardment sputter process, as opposed to a spontaneous reactive chemical etch process. However, this distinction is of only limited validity as oxide etching at acceptable rates is only accomplished with a F-containing ion species, and this fluorine source certainly reacts in a chemical fashion when impinging on the surface.

L. c. (1991) Operational characteristics of SF6 etching in an electron cyclotron resonance plasma reactor, 1. Vac. Sci. Techno!. B, 9, 318-324. 19. L. C. (1992) Plasma uniformity and power deposition in electron cyclotron resonance etch tools, 1. Vac. Sci. Technol. A, 10, 38 1270-1278. 20. Hinorf, W. d Physik, 21, 90. 21. Hopwood, J. (1992) Review of inductively coupled plasmas for plasma processing, Plasma Sources Sci. Technol. I, 109-116. 22. , Grapperhaus, M. J. (1994) Investigation of electron source and ion flux uniformity in high plasma density inductively coupled etching tools using 2dimensional modeling, J.

R. L. L. R. (1994) The GEC RF Reference Cell: A Defined Parallel-Plate Radio-Frequency System for Experimental and Theoretical Studies of Plasma-Processing Discharges, Rev. Sci. , 65, 140-154. 16. I. (1986) Mechanisms for power deposition in Ar/SiH4 capacitively coupled rf discharges, IEEE Trans. Plasma Sci, PS-14, 188-196. 17. M. P. (1992) Electrical isolation ofradio-frequcncy plasma discharges, 1. Appl. Phys. 71, 1171-1176. 18. L. c. (1991) Operational characteristics of SF6 etching in an electron cyclotron resonance plasma reactor, 1.

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