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Additional info for Laser Processing and Diagnostics: Proceedings of an International Conference, University of Linz, Austria, July 15–19, 1984
Boggess,!. W. Boyd, S. C. Moss, 17th International Conference on the Physics of Semiconductors, San Francisco, Cal ifornia, 6-10 August 1984 (to be publ ished). 1. W. Boyd, S. C. Moss, T. F. Boggess, A. L. Smirl, Appl. Phys. , (1984) . P. L. Liu, R. Yen, N. Bloembergen R. T. Hodgson, in "Laser and Electron Beam Processing of Material s," edited by C. W. White and P. S. Peercy (Academic, New York, 1980). J. M. Liu, Rev. Sci. , Optics Letters, 7, 196 (1982). M. Birnbaum, J. Appl. Phys. 36,3688 (1965).
A. 1. J. Cheng, Solid State Technology, Nov. 1983, p. J. Nissim, "A. B. F. Gibbons, J. Appl. Phys. 51, 1 (1980) L. W. Sigmon, Phys. Lett. A. L. D. Hess, J. Appl. Phys. ~, 921 (1982) P. Baeri and S. Campisano in: Laser Annealin of Semiconductors (Eds. M. W. Mayer p. 75, Acad. Press, New York (1982) J • F. Gi bbon s, in: H. Ryssel and H. Glawischnig, Springer Series in Electrophysics, Vol. 11 (1983) p. A. O. T.
Due to the hemispherical nature of the heat flow, the surface temperature is a function of the power divided by the beam radius instead of the area. 35eV/kT) As DOPED (2 II 10 20/Cm 3 ) <100> SILICON ~ Pabsorbed ... melting 21110 3 -e u ! " I I II 1 I t I t , I I I 800 I I I 1000 TEMPERATURE (·C) 42 Tmelt t Fig. 2. Dependence of the epitaxial regrowth of amorphous Si on temperature and dependence of surface temperature on power/radius of the laser beam  Since CW laser annealing does not result in melting and the heating periods are in the msec range, no diffusion of dopant atoms takes place.