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3-12. 2 MOLE FIG. 3-12 (Ref. 47). 0 INAS X Compositional dependence of the direct-energy gap Γ for InAs^Sb, III-V BINARY AND TERNARY LATTICE-MATCHING SYSTEMS FOR HETEROSTRUCTURE LASERS General Considerations In this section, a number of lattice-matching I I I - V binary and ternary heterojunctions and the potential use of these semiconductors for heterostructure lasers is discussed. A detailed description of each case would require information as extensive as that presented for G a A s - A l ^ G a !

Such motion, with no change in the number of atoms in the extra plane, is called glide. If, however, there is any component of the motion of the dislocation out of any possible slip plane, part of each of a pair of {112} sublattice planes must be added or removed. Such dislocation motion, where there is atom transport to or away from the dislocation, is referred to as dislocation climb. This second type of dislocation motion has important implications for laser degradation, and the discussion is extended in Chapter 8.

LnAs-AIAs0 1S 6 b0 84 As indicated in Fig. 4-1, the ternary is expected to have a miscibility gap. However, double heterostructures of N-AlAs0 S b 0 8 4| n - or p - I n A s | P - A l A s 0 1 6 S b 0 > 84 1 6 may be possible. 0 μιη) at 0°K. N o heterostructures have been prepared with this system. lnAs-GaAs0 0 S 8 b0 92 As indicated in Fig. 4-1, this ternary is also expected to have a miscibility gap. However, double heterostructures of i V - G a A s 0 i 0 8S b o . 9 2 | w - or / ? - I n A s | P - G a A s 0 Sb0 0 8 92 may be possible.

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