Download Ferroelectric Thin Films: Basic Properties and Device by Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama, PDF

By Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama, Yoshihiro Ishibashi (eds.)

Ferroelectric skinny motion pictures proceed to draw a lot cognizance because of their constructing, assorted purposes in reminiscence units, FeRAM, infrared sensors, piezoelectric sensors and actuators. This e-book, aimed toward scholars, researchers and builders, offers exact information regarding the elemental houses of those fabrics and the linked machine physics. All authors are said specialists within the field.

Show description

Read Online or Download Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications PDF

Best physics books

Molecular Mechanics and Modeling

This booklet makes a speciality of the most recent advancements in molecular mechanics and modeling examine. incorporated during this ebook are chapters reviewing the growth of the bridging telephone procedure (BCM) in its formula and its nanostructure and fabric modeling functions; an research of the response selectivity of alanine racemase mutants; and a step-wise approach for inferring the stereo constitution of proteins built utilizing similar stereo buildings.

Superionic Conductor Physics Proceedings of the 1st International Discussion Meeting on Superionic Conductor Physics Kyoto, Japan, 10-14 September 2003

The e-book offers uncomplicated experiences on ion shipping homes of ionic conductive sturdy. It describes learn on conception, modeling, simulation, crystalline constitution, nuclear magnetic resonance, electrical conduction, optical homes, and thermal dimension during this box. Superionic conductors are hugely promising useful fabrics.

Extra resources for Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications

Example text

Thus, similarly to BIT films, BLT thin films show a (00l) preferred orientation with anisotropic grain growth, as described in the next section. When the smaller rare earth ions such as Nd, Sm and Gd are substituted in BIT, the orientation of the film changes because of the increasing lattice mismatch between the (111) plane of Pt on TiOx /SiO2 /Si and the (00l) plane of (Bi,R)4 Ti3 O12 with decreasing ionic radius of the substituted rare earth ion. 3%, is calculated on the basis of an atomic alignment between the (111) plane of Pt and the (001) plane of BIT.

Ong, J. Osman, D. Tilley: Phys. Rev. B 63, 144109 (2001) 3, 19 [14] Y. Ishibashi, H. Orihara, D. Tilley: J. Phys. Soc. Jpn. 71, 1471 (2002) 3, 14, 15 [15] K. H. Chew, Y. Ishibashi, F. Shin, H. Chan: J. Phys. Soc. Jpn. 72, 2974 (2003) 3, 15, 16 [16] P. Ghosez, K. Rabe: Appl. Phys. Lett. 76, 2767 (2000) 13 [17] N. Yanase, K. Abe, N. Fukushima, T. Kawakubo: Jpn. J. Appl. Phys. 38, 5305 (1999) 13 [18] Y. Ishibashi, V. Dvorak: J. Phys. Soc. Jpn. 44, 32 (1978) 19 [19] J. Scott, H. Duiker, P. Beale, B.

The change in the crystal orientation due to the Nd substitution was clearly observed. 0) films showed a decreased intensity of 00l reflections, and had an almost random orientation. BIT-based materials have a layered perovskite structure and exhibit strongly anisotropic physical properties. The spontaneous polarization of BIT along the c-axis is known to be much smaller than that along 40 Shin-ichi Hirano et al. Fig. 11. 0] thin films on Pt/TiOx /SiO2 /Si substrates, prepared at 700 ◦ C the a-axis [25].

Download PDF sample

Rated 4.46 of 5 – based on 20 votes