By Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama, Yoshihiro Ishibashi (eds.)
Ferroelectric skinny motion pictures proceed to draw a lot cognizance because of their constructing, assorted purposes in reminiscence units, FeRAM, infrared sensors, piezoelectric sensors and actuators. This e-book, aimed toward scholars, researchers and builders, offers exact information regarding the elemental houses of those fabrics and the linked machine physics. All authors are said specialists within the field.
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Extra resources for Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
Thus, similarly to BIT ﬁlms, BLT thin ﬁlms show a (00l) preferred orientation with anisotropic grain growth, as described in the next section. When the smaller rare earth ions such as Nd, Sm and Gd are substituted in BIT, the orientation of the ﬁlm changes because of the increasing lattice mismatch between the (111) plane of Pt on TiOx /SiO2 /Si and the (00l) plane of (Bi,R)4 Ti3 O12 with decreasing ionic radius of the substituted rare earth ion. 3%, is calculated on the basis of an atomic alignment between the (111) plane of Pt and the (001) plane of BIT.
Ong, J. Osman, D. Tilley: Phys. Rev. B 63, 144109 (2001) 3, 19  Y. Ishibashi, H. Orihara, D. Tilley: J. Phys. Soc. Jpn. 71, 1471 (2002) 3, 14, 15  K. H. Chew, Y. Ishibashi, F. Shin, H. Chan: J. Phys. Soc. Jpn. 72, 2974 (2003) 3, 15, 16  P. Ghosez, K. Rabe: Appl. Phys. Lett. 76, 2767 (2000) 13  N. Yanase, K. Abe, N. Fukushima, T. Kawakubo: Jpn. J. Appl. Phys. 38, 5305 (1999) 13  Y. Ishibashi, V. Dvorak: J. Phys. Soc. Jpn. 44, 32 (1978) 19  J. Scott, H. Duiker, P. Beale, B.
The change in the crystal orientation due to the Nd substitution was clearly observed. 0) ﬁlms showed a decreased intensity of 00l reﬂections, and had an almost random orientation. BIT-based materials have a layered perovskite structure and exhibit strongly anisotropic physical properties. The spontaneous polarization of BIT along the c-axis is known to be much smaller than that along 40 Shin-ichi Hirano et al. Fig. 11. 0] thin ﬁlms on Pt/TiOx /SiO2 /Si substrates, prepared at 700 ◦ C the a-axis .