By E. E. Kotlyar, T. N. Nazarchuk (auth.), G. V. Samsonov (eds.)
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It really is commonly authorised that the new development in molecular and mobile biology do not need been attainable with no an knowing of the mechanisms and signaling pathways of conversation contained in the telephone and among quite a few cells of the animal organism. in reality an analogous development happened within the box of chemical conversation among person organisms of vertebrate species, and this quantity is aimed toward featuring the present state-of-the-art in this topic.
Torbern Bergman was once one of many maximum chemists of the 18th century. He edited this choice of lectures in chemistry by means of H. T. Scheffer and released it in 1775. It used to be most likely the 1st publication designed for use as a textbook for college periods in chemistry. Bergman awarded the 1st of his successively more desirable Tables of optionally available points of interest during this ebook, a desk of the chemical components which was once one of many earliest makes an attempt to offer the entire chemical components and their homes in one desk.
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Extra info for Chemical Properties and Analysis of Refractory Compounds / Khimicheskie Svoistva I Metody Analiza Tugoplavkikh Soedinenii / Химические Свойства И Методы Анализа Тугоплавких Соединений
A. A. Reshchikova, Zavod. , 31(2):1964 (1965). G. V. Samsonov and Yu. B. Titkov, Zh. , pp. 363, 669 (1963). N. N. Sentyurina, N. A. Makarova, and E. A. Gerasimova, Zavod. , 29(9):1957 (1963). Yu. V. Shmartsev, Yu. A. Valov, and A. S. Borshchevskii, Refractory Diamond-like Semiconductors [in Russian], Metallurgiya, Moscow (1964). J. Bassett, Analyst, 88(1044):238 (1963). J. Gueilleron and F. Thevenot, Bull. Soc. France, 2:402 (1965). F. V. Williams and R. A. Kuehrwein, J. Am. Chern. , 82:1330 (1960).
The data relating to the air oxidation of boron, gallium, and indium phosphides are presented in Tables 1 and 2 and Figs. 2-5. The results showed that microcrystalline boron phosphide was oxidation-resistant at temperatures up to 600°, gallium phosphide to 7000, and indium phosphide to 700°C. It should be noted that enlarging the phosphide particles increased th oxidation resistance, so that the three phosphides constituted valuable semiconductors. The kinetic oxidation curves of the phosphides obey a parabolic law, yn == KT, in the following temperature ranges: 600-900° for boron phosphide, 700-850° for gallium phosphide, and 700-850° for indium phosphide.
Z. Yu. Zndreeva and G. V. Efremov, Vestnik LGU, 2:130-135 (1964). W. F. , Practical Handbook on Inorganic Analysis [Russian translation], Goskhimizdat, Moscow (1960). Ya. Kh. , Izv. Akad. Nauk SSSR, Neorg. , 1:1484 (1965). A. A. Eliseev, A. A. Babitsyna, and E. S. Medvedeva, Zh. Neorg. , 9:1158 (1964). E. S. , in: Summaries of Contributions to the Third All-Union Conference on Semiconducting Compounds [in Russian], Kishinev (1963), p. 15. E. S. Medvedeva and G. D. Mitkina, Soviet Patent No. 928,839/23-4 dated from April 3, 1963.