Download Analog Integrated Circuit Design (2nd Edition) by Tony Chan Carusone, David A. Johns, Kenneth W. Martin PDF

By Tony Chan Carusone, David A. Johns, Kenneth W. Martin

The second version of Analog built-in Circuit Design specializes in extra insurance approximately different types of circuits that experience elevated in value some time past decade. additionally, the textual content is superior with fabric on CMOS IC equipment modeling, up to date processing format and accelerated insurance to mirror technical concepts. CMOS units and circuits have extra effect during this version in addition to a discounted quantity of textual content on BiCMOS and bipolar details. New chapters contain themes on frequency reaction of analog ICs and uncomplicated concept of suggestions amplifiers.  

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Additional resources for Analog Integrated Circuit Design (2nd Edition)

Example text

8(e) might be used in larger circuits where many transistors are present, to simplify the drawing somewhat. They will not be used in this text. 2 Basic Operation The basic operation of MOS transistors will be described with respect to an n-channel transistor. First, consider the simplified cross sections shown in Fig. 9, where the source, drain, and substrate are all connected to ground. In this case, the MOS transistor operation is similar to a capacitor. The gate acts as one plate of the capacitor, and the surface of the silicon, just under the thin insulating SiO2, acts as the other plate.

3 V. 016 pF Fig. 6; (b) its RC approximate equivalent. 2τ. 42) As a check, the circuit of Fig. 3(a) was analyzed using SPICE. 20 ns predicted. The reason for the different values of the rise and fall times is the nonlinearity of the junction capacitance. 37), whereas for larger bias voltages it is smaller. Normally, the extra accuracy that results from performing a more accurate analysis is not worth the extra complication because one seldom knows the value of Cj0 to better than 20 percent accuracy.

In the case of a positive voltage being applied to the gate, the opposite situation occurs, as shown in Fig. 9(b). For small positive gate voltages, the positive carriers in the channel under the gate are initially – repulsed and the channel changes from a p doping level to a depletion region. 6 In short, a sufficiently large positive gate-source voltage changes the channel beneath the gate to an n region, and the channel is said to be inverted. The gate-source voltage, for which the concentration of electrons under the gate is equal to the concentration of holes in the p– substrate far from the gate, is commonly referred to as the transistor threshold voltage and denoted V tn (for n-channel transistors).

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